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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
Georgia Inst Technol, Georgia Tech, Metz, France.
Nanovat SARL, Orsay, France; Univ Technol Troyes, France.
Nanovat SARL, Orsay; Univ Technol Troyes.
Univ Metz.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, nr 5, s. 944-947Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (similar to 1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.

sted, utgiver, år, opplag, sider
2008. Vol. 310, nr 5, s. 944-947
Emneord [en]
MOVPE, GaN, ZnO, LAYERS
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-13694DOI: 10.1016/j.jcrysgro.2007.11.137ISI: 000254428100016Scopus ID: 2-s2.0-39549115245OAI: oai:DiVA.org:kth-13694DiVA, id: diva2:326597
Merknad
QC 20100623Tilgjengelig fra: 2010-06-23 Laget: 2010-06-23 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Gallium nitride templates and its related materials for electronic and photonic devices
Åpne denne publikasjonen i ny fane eller vindu >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

 

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xiv, 89
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Emneord
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Disputas
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Veileder
Merknad
QC 20100623Tilgjengelig fra: 2008-05-16 Laget: 2008-05-16 Sist oppdatert: 2010-09-20bibliografisk kontrollert

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