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Enhanced boron diffusion in excimer laser preannealed Si
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-0292-224X
Vise andre og tillknytning
2005 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, nr 15Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 x 10(16) cm(-2). Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the standard diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.

sted, utgiver, år, opplag, sider
2005. Vol. 86, nr 15
Emneord [en]
energy implanted boron, dopant diffusion, silicon, redistribution, temperature, injection
Identifikatorer
URN: urn:nbn:se:kth:diva-14727DOI: 10.1063/1.1899765ISI: 000228901600028Scopus ID: 2-s2.0-20844458231OAI: oai:DiVA.org:kth-14727DiVA, id: diva2:332768
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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