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Fabrication and characterization of thin Delta E detectors for spectroscopic application
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
2005 (engelsk)Inngår i: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 546, nr 1-2, s. 312-318Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ultra-thin Delta Edetectors for spectroscopic applications have been fabricated and characterized down to a thickness of 4.5 mu m. A common one-side mask aligner was used to fabricate the detectors. The detectors display low leakage current and the resulting capacitance is close to the detector window capacitance below a threshold voltage. The detector telescope needs to be slightly tilted to reduce the probability for channeling. However, even better control of the thickness uniformity is needed to improve the resolution in the Delta E-E detector telescope.

sted, utgiver, år, opplag, sider
2005. Vol. 546, nr 1-2, s. 312-318
Emneord [en]
thin silicon detector, Delta E detector, energy straggling, ion channeling, chicsi
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-14894DOI: 10.1016/j.nima.2005.03.053ISI: 000230288200058Scopus ID: 2-s2.0-20444468547OAI: oai:DiVA.org:kth-14894DiVA, id: diva2:332935
Merknad
QC 20100525 QC 20111011Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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