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Annealing study of Sb+ and Al+ ion-implanted ZnO
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0002-8760-1137
Vise andre og tillknytning
2005 (engelsk)Inngår i: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 38, nr 4-6, s. 464-471Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this work we have studied diffusion and electrical activation in Al+ and Sb+ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 degrees C in pure oxygen atmosphere, After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.

sted, utgiver, år, opplag, sider
2005. Vol. 38, nr 4-6, s. 464-471
Emneord [en]
scanning capacitance microscopy, films
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-15220DOI: 10.1016/j.spmi.2005.08.017ISI: 000233651800029Scopus ID: 2-s2.0-33644541418OAI: oai:DiVA.org:kth-15220DiVA, id: diva2:333261
Merknad
QC 20100525 QC 20111012Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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