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Strong broad C-band room-temperature photoluminescence in amorphous Er2O3 film
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Materialfysik, MF.ORCID-id: 0000-0001-8774-9302
Vise andre og tillknytning
2006 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, nr 2Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Photoluminescence with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er2O3 films grown on quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula [J. Phys. E 16, 1214 (1983)] to determine dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient as high as 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. For 5 mm long waveguide amplifier with erbium doping confinement factor of 0.1, the theory predicts the spectral gain of 18 dB with 1.2 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er3+ ions are excited from the ground state to the I-4(3/2) laser level. Strong broadband photoluminescence at room temperature and inherently flat spectral gain promise Er2O3 films for ultrashort high-gain optical waveguide amplifiers and integrated light circuits.

sted, utgiver, år, opplag, sider
2006. Vol. 89, nr 2
Emneord [en]
laser-ablation, silicon, si, luminescence, excitation, gain
Identifikatorer
URN: urn:nbn:se:kth:diva-15921DOI: 10.1063/1.2221517ISI: 000239793100014Scopus ID: 2-s2.0-33746052858OAI: oai:DiVA.org:kth-15921DiVA, id: diva2:333963
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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