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Thermal analysis for a photonic Si ridge wire with a submicron metal heater
KTH, Skolan för elektro- och systemteknik (EES), Elektroteknisk teori och konstruktion.ORCID-id: 0000-0002-3401-1125
2008 (engelsk)Inngår i: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 281, nr 9, s. 2467-2471Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A photonic Si ridge wire with a submicron metal heater and the associated thermal analysis are presented. When the up-cladding thickness becomes thinner, the thermal response becomes faster while the temperature at the core region remains almost the same. When the under-etched depth in the insulator layer increases, the stable temperature increases linearly at the same power consumption. This indicates that a deeper etching is preferred to achieve a lower power consumption (for the same temperature increment). Our numerical simulation also shows that the power consumption of the present Si waveguide structure is almost less than 1/10 of that for a conventional one and the response time is about half of that of the conventional one.

sted, utgiver, år, opplag, sider
2008. Vol. 281, nr 9, s. 2467-2471
Emneord [en]
thermo-optical (TO), Si, wire, submicron, heater, thermal, rise time, silicon-on-insulator, wave-guides, thermooptical switches
Identifikatorer
URN: urn:nbn:se:kth:diva-17501DOI: 10.1016/j.optcom.2007.12.057ISI: 000255487400020Scopus ID: 2-s2.0-40849114640OAI: oai:DiVA.org:kth-17501DiVA, id: diva2:335545
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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