Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
Vise andre og tillknytning
2009 (engelsk)Inngår i: Opto-Electronics Review, ISSN 1230-3402, E-ISSN 1896-3757, Vol. 17, nr 3, s. 260-264Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

sted, utgiver, år, opplag, sider
2009. Vol. 17, nr 3, s. 260-264
Emneord [en]
optical efficiency, photoluminescence (PL), InGaNAs/GaAs single quantum, well (SQW) nanostructures, localized excitons, full width at half, maximum (FWHM), PL integrated intensity, thermal annealing, single quantum-wells, gainnas, alloys, temperature, absorption, gaas1-xnx
Identifikatorer
URN: urn:nbn:se:kth:diva-18771DOI: 10.2478/s11772-009-0008-9ISI: 000269898100012Scopus ID: 2-s2.0-70349626797OAI: oai:DiVA.org:kth-18771DiVA, id: diva2:336818
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Hammar, Mattias

Søk i DiVA

Av forfatter/redaktør
Hammar, Mattias
Av organisasjonen
I samme tidsskrift
Opto-Electronics Review

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 36 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf