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Etching of silicon nanowires on Ag(110) by atomic hydrogen
Vise andre og tillknytning
2009 (engelsk)Inngår i: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, nr 23, s. 3350-3354Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.

sted, utgiver, år, opplag, sider
2009. Vol. 603, nr 23, s. 3350-3354
Emneord [en]
Atomic hydrogen, Silicon nanowires, Scanning Tunnelling Microscopy, X-Ray Photoelectron Spectroscopy, Electron Energy Loss Spectroscopy, energy-loss spectroscopy, surfaces, si(111), photoemission, geometry, boron
Identifikatorer
URN: urn:nbn:se:kth:diva-19016DOI: 10.1016/j.susc.2009.09.023ISI: 000272431600004Scopus ID: 2-s2.0-70449511131OAI: oai:DiVA.org:kth-19016DiVA, id: diva2:337063
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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