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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Vise andre og tillknytning
2000 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, nr 3, s. 549-554Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.

sted, utgiver, år, opplag, sider
2000. Vol. 44, nr 3, s. 549-554
Identifikatorer
URN: urn:nbn:se:kth:diva-19568ISI: 000085469300021OAI: oai:DiVA.org:kth-19568DiVA, id: diva2:338260
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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Malm, B. Gunnar

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Malm, B. GunnarRadamson, Henry H.Wang, Yong-BinLandgren, GunnarÖstling, Mikael
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