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High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions
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2000 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, nr 19, s. 3051-3053Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

p(+)-n-n(+) junctions were fabricated by ion implantation with Al of low-doped epitaxial n layers of 4H-SiC grown by chemical vapor deposition on commercial 4H-SiC wafers both with and without reduction of micropipe densities. It was shown that, using high levels of Al ion doping (5x10(16) cm(-2)) in combination with rapid thermal anneal, single-crystal p(+)-4H-SiC layers can be obtained. These layers do not form barriers at the contact metal-semiconductor interface and do not introduce additional resistance into structures with p(+)-n junctions. This significantly reduces the forward voltage drop across the structure in a wide range of current densities up to 10(4) A cm(-2).

sted, utgiver, år, opplag, sider
2000. Vol. 77, nr 19, s. 3051-3053
Identifikatorer
URN: urn:nbn:se:kth:diva-20137ISI: 000165069500037OAI: oai:DiVA.org:kth-20137DiVA, id: diva2:338830
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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