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Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.ORCID-id: 0000-0001-8108-2631
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.ORCID-id: 0000-0002-5845-3032
Vise andre og tillknytning
2001 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 48, nr 3, s. 444-449Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

GaN/SiC heterojunctions can improve the performance considerably for BJTs and FETs. In this work, heterojunction diodes have been manufactured and characterized. The fabricated diodes have a GaN n-type cathode region on top of a JH-SIC p-type epi layer. The GaN layer was grown with HVPE directly on off-axis SiC without a buffer layer. Mesa structures were formed and a Ti metallization was used as cathode contact to GaN, and the anode contact was deposited on the backside using sputtered Al. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on the diode structures. The ideality factor of the measured diodes was 1.1 and was constant with temperature. A built in potential of 2.06 V was extracted from I-V-measurements and agrees well with the built in potential from C-V-measurements. The conduction band offset was extracted to 1.1 eV and the heterojunction was of type II. The turn on voltage for the diodes is about 1 V lower than expected and a suggested mechanism for this effect is discussed.

sted, utgiver, år, opplag, sider
2001. Vol. 48, nr 3, s. 444-449
Emneord [en]
gallium nitride, HVPE, semiconductor heterojunctions, silicon carbide, contact
Identifikatorer
URN: urn:nbn:se:kth:diva-20410ISI: 000167253000009OAI: oai:DiVA.org:kth-20410DiVA, id: diva2:339105
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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