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Influence of Si doping on optical properties of wurtzite GaN
Vise andre og tillknytning
2001 (engelsk)Inngår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 13, nr 40, s. 8891-8899Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The band gap shift (BGS) of Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes has been investigated at low temperature. The critical impurity concentration for the metal-non-metal transition is estimated from the generalized Drude approach for the resistivity to be about 1.0 x 10(18) cm(-3). The calculations for the BGS were carried out within a framework of the random phase approximation, taking into account the electron-electron, electron-optical phonon, and electron-ion interactions. In the wake of very recent photoluminescence measurements, we have shown and discussed the possible transitions involved in the experimental results.

sted, utgiver, år, opplag, sider
2001. Vol. 13, nr 40, s. 8891-8899
Emneord [en]
iii-v nitrides, doped gan, band, semiconductors, si-p,bi, shift, donor
Identifikatorer
URN: urn:nbn:se:kth:diva-21120ISI: 000172323000004OAI: oai:DiVA.org:kth-21120DiVA, id: diva2:339817
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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Persson, Clas

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Persson, ClasJohansson, Börje
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