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High frequency performance of SiGeCHBTs with selectively & non-selectively grown collector
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
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2004 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, s. 138-141Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Two high-frequency heterojunction bipolar transistor (HBT) architectures based on SiGeC have been fabricated and characterized. Different collector designs were applied either by using selective epitaxial growth doped with phosphorous or by non-selective epitaxial growth doped with arsenic. Both designs have a non-selectively deposited SiGeC base doped with boron and a poly-crystalline emitter doped with phosphorous. Both HBT designs exhibit similar electrical characteristics with a peak DC current gain of around 1600 and a BVCEO of 1.8V. The cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)) vary from 40-80 GHz and 15-30 GHz, respectively, depending on lateral design relations. Good high frequency performance for a device with a selectively grown collector is demonstrated for the first time.

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2004. Vol. T114, s. 138-141
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URN: urn:nbn:se:kth:diva-23236DOI: 10.1088/0031-8949/2004/T114/035ISI: 000204272000036Scopus ID: 2-s2.0-39549106473OAI: oai:DiVA.org:kth-23236DiVA, id: diva2:341934
Merknad
QC 20100525 QC 20111102Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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