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Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applications
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.ORCID-id: 0000-0003-3056-4678
2004 (engelsk)Inngår i: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 19, nr 5, s. 615-625Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 mum strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.

sted, utgiver, år, opplag, sider
2004. Vol. 19, nr 5, s. 615-625
Emneord [en]
quantum-well lasers, differential gain, carrier transport, band offsets, layer, wavelength, bandwidth, diodes, inp, performance
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-23462DOI: 10.1088/0268-1242/19/5/010ISI: 000221732000014Scopus ID: 2-s2.0-2542481881OAI: oai:DiVA.org:kth-23462DiVA, id: diva2:342160
Merknad

QC 20100827

Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
Åpne denne publikasjonen i ny fane eller vindu >>Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
2005 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). The basic three-point central-di erence approximation of the δ2=δx2 operator used in the Helmholtz equation is extended to a new ve-point and seven-point approximation with appropriate interface conditions for the TE and TM elds. Di erent structures such as a high-contrast waveguide and a TM surface plasmon mode waveguide are simulated, and improved numerical accuracy for calculating the optical mode and propagation constant is demonstrated. A new fast and stable non-paraxial bi-directional beam propagation method, called Cascading and Doubling algorithm, is derived to model deep gratings with many periods. This algorithm is applied to model a quasi-guided multi-layer anti-resonant reecting optical waveguide (ARROW) grating polarizing structure.

In the second part of the thesis, our focus is on active optical devices such as vertical-cavity and edge-emitting lasers. With a view to improve the bandwidth of directly modulated laser, an InGaAsP quantum well with InGaAlAs barrier is studied due to its favorable band o set for hole injection as well as for electron con nement. Quantum wells with di erent barrier bandgap are grown and direct carrier transport measurements are done using time and wavelength resolved photoluminescence upconversion. Semi-insulating regrown Fabry-Perot lasers are manufactured and experimentally evaluated for light-current, optical gain, chirp and small-signal performance. It is shown that the lasers having MQW with shallow bandgap InGaAlAs barrier have improved carrier transport properties, better T0, higher di erential gain and lower chirp. For lateral current injection laser scheme, it is shown that a narrow mesa is important for gain uniformity across the active region. High speed directly modulated DBR lasers are evaluated for analog performance and a record high spurious free dynamic range of 103 dB Hz2=3 for frequencies in the range of 1-19 GHz is demonstrated. Large signal transmission experiment is performed at 40 Gb/s and error free transmission for back-to-back and through 1 km standard single mode ber is achieved.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2005. s. xvi, 82
Serie
Trita-MVT, ISSN 0348-4467 ; 2005:3
Emneord
Method of Lines, Grating, ARROW Waveguide, Semiconductor laser, quantum well
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-433 (URN)91-7178-132-3 (ISBN)
Disputas
2005-10-07, Sal C1, KTH-Electrum, 10:00
Opponent
Veileder
Merknad
QC 20100827Tilgjengelig fra: 2005-09-27 Laget: 2005-09-27 Sist oppdatert: 2010-08-27bibliografisk kontrollert

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