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The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0002-4606-4865
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0003-3056-4678
Vise andre og tillknytning
2006 (engelsk)Inngår i: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 42, nr 7, s. 713-714Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.

sted, utgiver, år, opplag, sider
2006. Vol. 42, nr 7, s. 713-714
Emneord [en]
Carrier transport; Fabry-Perot laser; InGaAIAs; InGaAsP; Quantum well (QW); Time-resolved photo luminescence
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-24236DOI: 10.1109/JQE.2006.876710ISI: 000239404700013Scopus ID: 2-s2.0-51849096527OAI: oai:DiVA.org:kth-24236DiVA, id: diva2:345851
Merknad

QC 20100827

Tilgjengelig fra: 2010-08-27 Laget: 2010-08-27 Sist oppdatert: 2017-06-08bibliografisk kontrollert
Inngår i avhandling
1. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
Åpne denne publikasjonen i ny fane eller vindu >>Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. But it suffers from its slow signal transmission between the circuit boards and between the chips as it uses conventional electronic wire connections. This being the bottle-neck that hinders enhanced transmission speed, optical-interconnects in silicon have been the dream for several years. Suffering from its inherent deficient optical properties, silicon is not supposed to offer this feasibility in the near future. Hence, integration of direct bandgap materials, such as indium phosphide on silicon, is one of the viable alternatives. This thesis addresses these two issues, namely monolithic integration on indium phosphide and monolithic integration of indium phosphide on silicon. To this end, we use two techniques, namely selective epitaxy and heteroepitaxy by employing hydride vapor phase epitaxy method.

The first part deals with the exploitation of selective epitaxy for fabricating a discrete and an integrated chip based on InP. The former is a multi-quantum well buried heterostructure laser emitting at 1.55 µm that makes use of AlGaInAs and InGaAsP as the barrier and well, respectively. We demonstrate that even though it contains Al in the active region, semi-insulating InP:Fe can be regrown. The lasers demonstrate threshold as low as 115A/cm2/quantum well, an external quantum efficiency of 45% and a characteristic temperature of 78 K, all at 20 oC. Concerning the integrated device, we demonstrate complex and densely packed buried arrayed waveguide (AWG) structures found in advanced systems-on-the-chip for optical code-division multiple-access (O-CDMA). We present a case of an error-free 10 Gb/s encoding and decoding operation from an eight-channel AWGs with 180 GHz channel spacing. Selective epitaxial growth aspects specific to these complicated structures are also described and guidance on design implementation of these AWGs is given. Mass transport studies on these AWGs are also presented.

The second part deals with various studies on and relevant to epitaxial lateral overgrowth (ELOG) of high quality InP on silicon. (i) ELOG often encounters cases where most part of the surface is covered by mask. From the modeling on large mask area effects, their impact on the transport and kinetic properties has been established. (ii) It is known that ELOG causes strain in the materials. From synchrotron X-ray measurements, strain is shown to have large effect on the mask edges and the underlying substrate. (iii) The combination of strain and the influence of image forces when reducing the opening dimensions in ELOG has been modeled. It is found to be very beneficial to reduce openings down to ~100 nm where effective filtering of dislocations is predicted to take place even in vicinity of the openings. We call it nano-ELOG. (iv) By combining the modeling results of nano-ELOG and of a pre-study of ELOG on pure InP, a novel net pattern design is invented and experimented for nano-ELOG of InP on Si. PL measurements together with transmission electron microscopy observations indicate beneficial effects of small size openings (200 nm) compared to 1000 nm openings. (v) ELOG of InP on silicon-on-insulators together with a multi-quantum well structure grown on it has been demonstrated for the first time. This is particularly interesting for integrating silicon/silicon dioxide waveguides with InP.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xii, 90
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:11
Emneord
Semiconductor Physics
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4801 (URN)978-91-7178-991-4 (ISBN)
Disputas
2008-06-13, N2, School of Information and Communication Technology, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Veileder
Merknad
QC 20100902Tilgjengelig fra: 2008-06-04 Laget: 2008-06-04 Sist oppdatert: 2010-09-02bibliografisk kontrollert
2. Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
Åpne denne publikasjonen i ny fane eller vindu >>Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
2005 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). The basic three-point central-di erence approximation of the δ2=δx2 operator used in the Helmholtz equation is extended to a new ve-point and seven-point approximation with appropriate interface conditions for the TE and TM elds. Di erent structures such as a high-contrast waveguide and a TM surface plasmon mode waveguide are simulated, and improved numerical accuracy for calculating the optical mode and propagation constant is demonstrated. A new fast and stable non-paraxial bi-directional beam propagation method, called Cascading and Doubling algorithm, is derived to model deep gratings with many periods. This algorithm is applied to model a quasi-guided multi-layer anti-resonant reecting optical waveguide (ARROW) grating polarizing structure.

In the second part of the thesis, our focus is on active optical devices such as vertical-cavity and edge-emitting lasers. With a view to improve the bandwidth of directly modulated laser, an InGaAsP quantum well with InGaAlAs barrier is studied due to its favorable band o set for hole injection as well as for electron con nement. Quantum wells with di erent barrier bandgap are grown and direct carrier transport measurements are done using time and wavelength resolved photoluminescence upconversion. Semi-insulating regrown Fabry-Perot lasers are manufactured and experimentally evaluated for light-current, optical gain, chirp and small-signal performance. It is shown that the lasers having MQW with shallow bandgap InGaAlAs barrier have improved carrier transport properties, better T0, higher di erential gain and lower chirp. For lateral current injection laser scheme, it is shown that a narrow mesa is important for gain uniformity across the active region. High speed directly modulated DBR lasers are evaluated for analog performance and a record high spurious free dynamic range of 103 dB Hz2=3 for frequencies in the range of 1-19 GHz is demonstrated. Large signal transmission experiment is performed at 40 Gb/s and error free transmission for back-to-back and through 1 km standard single mode ber is achieved.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2005. s. xvi, 82
Serie
Trita-MVT, ISSN 0348-4467 ; 2005:3
Emneord
Method of Lines, Grating, ARROW Waveguide, Semiconductor laser, quantum well
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-433 (URN)91-7178-132-3 (ISBN)
Disputas
2005-10-07, Sal C1, KTH-Electrum, 10:00
Opponent
Veileder
Merknad
QC 20100827Tilgjengelig fra: 2005-09-27 Laget: 2005-09-27 Sist oppdatert: 2010-08-27bibliografisk kontrollert

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