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Strong inter-conduction-band absorption in heavily fluorine doped tin oxide
KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap.
Departamento de Química, Universidade Federal do Paraná.
Departamento de Física, Universidade Federal do Paraná.
Instituto de Física, Universidade Federal da Bahia.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 255, nr 5, s. 1874-1879Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.

sted, utgiver, år, opplag, sider
2008. Vol. 255, nr 5, s. 1874-1879
Emneord [en]
Tin oxide, Transparent conducting film, Doping, Optical absorption, Resistivity
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-26005DOI: 10.1016/j.apsusc.2008.06.113ISI: 000261274100039Scopus ID: 2-s2.0-56949095313OAI: oai:DiVA.org:kth-26005DiVA, id: diva2:362249
Merknad
QC 20101109 Uppdaterad från submitted till published 20101109.Tilgjengelig fra: 2010-11-09 Laget: 2010-11-09 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Electrical and optical properties of thin film SnO2 and SnO2:F: transparent electrodes in organic photovoltaics
Åpne denne publikasjonen i ny fane eller vindu >>Electrical and optical properties of thin film SnO2 and SnO2:F: transparent electrodes in organic photovoltaics
2008 (engelsk)Licentiatavhandling, med artikler (Annet vitenskapelig)
sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. x, 46
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4832 (URN)978-91-7178-958-7 (ISBN)
Presentation
2008-06-12, K408, KTH, Brinellvägen 23, Stockholm, 10:00
Opponent
Veileder
Merknad
QC 20101109Tilgjengelig fra: 2008-06-17 Laget: 2008-06-17 Sist oppdatert: 2010-11-09bibliografisk kontrollert

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