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Photoluminescence study of CVD layers highly doped with nitrogen
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-0292-224X
2000 (engelsk)Inngår i: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, s. 619-622Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

From a systematic study of highly doped n-type 4H-SiC epilayers we observe a photoluminescence spectrum, which was previously associated with the recombination of a bound exciton at the neutral boron acceptor. Electrical measurements performed on these layers show clearly n-type conductivity. It was feasible to dope and measure reproducibly the layers from low 10(17) to mid 10(18) cm(-3). It was not possible to determine the doping from Capacitance Voltage measurements for the samples grown with the highest doping (>6.10(18) cm(-3)). However Secondary Ion Mass spectrometry did not reveal any boron impurities in the layers and shows good agreement with electrical measurements regarding the nitrogen concentration.

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 619-622
Serie
MATERIALS SCIENCE FORUM
Emneord [en]
Mott transition; n-type doping; photoluminescence
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-60807OAI: oai:DiVA.org:kth-60807DiVA, id: diva2:481522
Merknad
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Tilgjengelig fra: 2012-01-21 Laget: 2012-01-15 Sist oppdatert: 2012-01-21bibliografisk kontrollert

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