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Growth of delta-doped SiC epitaxial layers
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-0292-224X
2001 (engelsk)Inngår i: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, s. 563-566Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

N- and p-type delta -doped SiC epitaxial layers have been grown by vapour phase epitaxy and characterised by SIMS and CV measurements. Different techniques of achieving delta -doped layers are examined. Doping profiles with FWHM from 1 to 10nm have been obtained at different peak concentrations.

sted, utgiver, år, opplag, sider
2001. Vol. 353-356, s. 563-566
Serie
Materials Science Forum
Emneord [en]
delta-doping; vapor phase epitaxy
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-60805OAI: oai:DiVA.org:kth-60805DiVA, id: diva2:481525
Merknad
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 20140805Tilgjengelig fra: 2012-01-21 Laget: 2012-01-15 Sist oppdatert: 2012-01-21bibliografisk kontrollert

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