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Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-0292-224X
Vise andre og tillknytning
2002 (engelsk)Inngår i: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, s. 203-206Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.

sted, utgiver, år, opplag, sider
2002. Vol. 389-3, s. 203-206
Serie
MATERIALS SCIENCE FORUM
Emneord [en]
aluminum; CVD; doping; hot-wall; thermodynamical calculations
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-63021OAI: oai:DiVA.org:kth-63021DiVA, id: diva2:481534
Merknad
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 20140805Tilgjengelig fra: 2012-01-21 Laget: 2012-01-21 Sist oppdatert: 2012-01-21bibliografisk kontrollert

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Linnarsson, M K

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