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Influence of growth parameters on the nitrogen incorporation in 4H- And 6H-SiC epilayers grown by hot-wall chemical vapour deposition
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-0292-224X
Vise andre og tillknytning
2001 (engelsk)Inngår i: Materials Research Society Symposium Proceedings, San Francisco, CA, 2001, Vol. 680, s. 73-78Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made. © 2001 Materials Research Society.

sted, utgiver, år, opplag, sider
San Francisco, CA, 2001. Vol. 680, s. 73-78
Serie
2001 MRS Spring Meeting
Emneord [en]
Chemical vapor deposition, Epilayers, Growth rate, Nitrogen, Pressure effects, Thermal effects, Cold wall reactor, Hot wall chemical vapour deposition, Incorporation mechanism, Silicon carbide
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-63031OAI: oai:DiVA.org:kth-63031DiVA, id: diva2:481547
Merknad
References: Forsberg, U., Henry, A., Danielsson, O., Rorsman, N., Eriksson, J., Wahab, Q., Storasta, L., Janzén, E., (2000) Conference paper MRS, , Boston; Ekvi System 3.01 from Svensk EnergiData, B. Nolang, Dept. Of Inorganic Chemistry, Uppsala University, SwedenPrivate conversation with K. Larsson and J. Olander, Uppsala University, SwedenLofgren, P.M., Ji, W., Hallin, C., Gu, C.-Y., (2000) Journal of The Electrochemical Society, 147 (1), pp. 164-175; Larkin, D.J., Neudeck, P.G., Powell, J.A., Malus, L.G., (1994) Appl. Phys. Lett, 65 (13), pp. 1659-1661; Kimoto, T., Itoh, A., Matsunami, H., (1995) Appl. Phys. Lett, 67 (16), pp. 2385-2387 NR 20140805Tilgjengelig fra: 2012-01-21 Laget: 2012-01-21 Sist oppdatert: 2012-01-21bibliografisk kontrollert

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Linnarsson, M. K.

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