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Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
KTH, Skolan för informations- och kommunikationsteknik (ICT).ORCID-id: 0000-0002-0292-224X
Vise andre og tillknytning
2001 (engelsk)Inngår i: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, s. H2.3.1-H2.3.6Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.

sted, utgiver, år, opplag, sider
Boston, MA, 2001. Vol. 640, s. H2.3.1-H2.3.6
Serie
Silicon Carbide- Materials, Processing and Devices
Emneord [en]
Chemical reactors, Chemical vapor deposition, Electric variables measurement, Epitaxial growth, Interfaces (materials), Scanning electron microscopy, Secondary ion mass spectrometry, Semiconductor doping, Semiconductor growth, Silicon carbide, Capacitance-voltage measurement, Trimethylaluminum, MESFET devices
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-63032Scopus ID: 2-s2.0-0034877072OAI: oai:DiVA.org:kth-63032DiVA, id: diva2:481548
Konferanse
Silicon Carbide- Materials, Processing and Devices; Boston, MA; United States; 27 November 2000 through 29 November 2000
Merknad

QC 20190515

Tilgjengelig fra: 2012-01-21 Laget: 2012-01-21 Sist oppdatert: 2019-05-15bibliografisk kontrollert

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