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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Vise andre og tillknytning
2008 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, nr 9, s. 1274-1279Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

sted, utgiver, år, opplag, sider
2008. Vol. 52, nr 9, s. 1274-1279
Emneord [en]
MOS, high-k, HfO2, Gd2O3, capacitance frequency spectroscopy, capture cross section
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-50525DOI: 10.1016/j.sse.2008.04.005ISI: 000259688300003OAI: oai:DiVA.org:kth-50525DiVA, id: diva2:495382
Merknad
QC 20120209Tilgjengelig fra: 2012-02-08 Laget: 2011-12-06 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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Lemme, Max C.
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