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2.8 kV, forward drop JBS diode with low leakage
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
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2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-342, s. 1179-1182Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

High voltage Schottky-, Junction Barrier Schottky (JBS)- and PiN-diodes with an implanted JTE termination have been fabricated on the same 4H-SiC wafer. Blocking voltages of 2.5-2.8 kV were reached for JBS and PiN diodes while the Schottky diodes reach about 2.0 kV. It is shown that the JBS design increases the blocking voltage effectively compared to the Schottky device with less than 10% increase in on-state static losses. Also, a comparison of static losses to a PiN diode gives a decrease of 40% for the JBS. The leakage current is also lowered by two decades compared to the Schottky device at its blocking voltage. Temperature measurements show that the low leakage current is maintained up to at least 225 °C.

sted, utgiver, år, opplag, sider
Trans Tech Publications Inc., 2000. Vol. 338-342, s. 1179-1182
Emneord [en]
Electric losses, Electric rectifiers, Leakage currents, Schottky barrier diodes, Semiconducting silicon compounds, Temperature measurement, Junction barrier Schottky (JBS) diodes, Silicon carbide
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Identifikatorer
URN: urn:nbn:se:kth:diva-85420OAI: oai:DiVA.org:kth-85420DiVA, id: diva2:499826
Merknad
Sponsors: NASA Glenn Research Center; Air Force Research Laboratory; Office Naval Research; Director of Defence Research and Engineering NR 20140805Tilgjengelig fra: 2012-02-13 Laget: 2012-02-13 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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http://www.scopus.com/inward/record.url?eid=2-s2.0-0342572423&partnerID=40&md5=1d5a8892deb94de13cab54b2fd7de25c

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Zetterling, Carl-Mikael

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