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A novel UMOS capacitor test structure for SiC devices
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
1996 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 39, nr 9, s. 1396-1397Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices. Copyright © 1996 Elsevier Science Ltd.

sted, utgiver, år, opplag, sider
1996. Vol. 39, nr 9, s. 1396-1397
Emneord [en]
Bipolar transistors, Capacitance, Capacitors, Electric contacts, Gates (transistor), Oxides, Reactive ion etching, Semiconducting films, Semiconductor device manufacture, Semiconductor device structures, Silicon carbide, Silicon nitride, Capacitance voltage characteristics, Insulated gate bipolar transistors, Mask layers, Oxide thickness, Thermal gate oxides, U grooved MOS capacitors, MOSFET devices
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-85401DOI: 10.1016/0038-1101(96)80001-ZOAI: oai:DiVA.org:kth-85401DiVA: diva2:499939
Merknad
References: Bhatnagar, M., Alok, D., Baliga, B.J., (1993) Proc. 5th Int. Conf. on Silicon Carbide and Related Materials Conf., 137, p. 703. , Institute of Physics Conference Series; Palmour, J.W., Edmond, J.A., Kong, H.S., Carter, C.H., (1993) IECEC-91, Proc. 28th Intersociety Energy Conversion Conf., p. 1249; Palmour, J.W., Carter, C.H., Weitzel, C.E., Nordquist, K.J., (1994) Diamond, SiC and Nitride Wide-Bandgap Semiconductors, 339, p. 133. , Materials Research Society; Bakowski, M., Gustafsson, U., Ramberg, L.P., (1994) ESSDERC '94, p. 761. , Editions FrontiÚres; Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A., (1991) Proc. IEEE, 79, p. 677; Ivanov, P.A., Chelnokov, V.E., (1992) Semicond. Sci. Technol., 7, p. 863 NR 20140805Tilgjengelig fra: 2012-02-13 Laget: 2012-02-13 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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Zetterling, Carl-Mikael

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