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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-0977-2598
Vise andre og tillknytning
2001 (engelsk)Inngår i: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on, 2001, Vol. 2Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.

sted, utgiver, år, opplag, sider
2001. Vol. 2
Emneord [en]
850 nm; CW operation; GaAs-AlGaAs; GaAs/AlGaAs buried-heterostructure laser diodes; GaInP:Fe; GaInP:Fe burying layer; etched laser mesas; high-speed characteristics; hydride vapor phase epitaxy; in-plane lasers; performance; regrowth; semi-insulating GaInP:Fe regrowth; vertical-cavity surface-emitting lasers; III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; iron; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth;
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Identifikatorer
URN: urn:nbn:se:kth:diva-89312DOI: 10.1109/CLEOPR.2001.971097OAI: oai:DiVA.org:kth-89312DiVA, id: diva2:502946
Konferanse
Pacific Rim Conference on Lasers and Electro-Optics
Merknad
NR 20140805Tilgjengelig fra: 2012-02-14 Laget: 2012-02-14 Sist oppdatert: 2012-02-14bibliografisk kontrollert

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