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The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. (Photonics)ORCID-id: 0000-0003-3056-4678
1992 (engelsk)Inngår i: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 10, s. 1256-1266Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Field stitching errors and their effect on the single-mode characteristics of distributed feedback (DFB) lasers fabricated using electron beam lithography were investigated. The stitching errors are associated with small-area, high-resolution electron beam exposure, which has the potential advantage of high-speed writing of laser gratings. Measurements show that the errors are composed of a systematic and a stochastic part. Their effect on the gain margin was simulated both for lambda;/4 phase-shifted and optimized multiple-phase-shifted DFB lasers. Simulations show that the lasers are insensitive to the systematic part of the stitching errors if the number of errors is large enough. The stochastic part was found to give rise to a variation in gain margin of the DFB lasers. It is concluded that the field stitching accuracy in the high-resolution mode of a commercial system for electron beam lithography is sufficient to provide a high yield of single-mode lasers. However, it is essential that certain precautions be taken considering exposure conditions and that a fault tolerant laser design be used

sted, utgiver, år, opplag, sider
1992. Vol. 10, s. 1256-1266
Emneord [en]
Bragg grating;DFB lasers;InP-InGaAsP laser;electron beam lithography;fault tolerant laser design;gain margin;high-resolution electron beam exposure;high-speed writing;laser gratings;phase shifted lasers;simulation;single-mode characteristics;spectral characteristics;stitching errors;stochastic errors;systematic errors;III-V semiconductors;diffraction gratings;distributed feedback lasers;electron beam lithography;errors;gallium arsenide;gallium compounds;indium compounds;optical workshop techniques;semiconductor lasers;
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Identifikatorer
URN: urn:nbn:se:kth:diva-89275DOI: 10.1109/50.156877OAI: oai:DiVA.org:kth-89275DiVA, id: diva2:503035
Merknad
NR 20140805Tilgjengelig fra: 2012-02-14 Laget: 2012-02-14 Sist oppdatert: 2017-12-07bibliografisk kontrollert
Inngår i avhandling
1. On the Stability and Dynamics of Semiconductor Lasers
Åpne denne publikasjonen i ny fane eller vindu >>On the Stability and Dynamics of Semiconductor Lasers
1994 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
sted, utgiver, år, opplag, sider
KTH Royal Institute of Technology, 1994
Serie
Trita-MVT, ISSN 0348-4467 ; 1994:1
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-89578 (URN)
Disputas
1994-09-15, Kollegiesalen, KTH, Drottning Kristinas Väg, Stockholm, 10:00 (engelsk)
Opponent
Veileder
Merknad

QC 20130201

Tilgjengelig fra: 2013-02-01 Laget: 2012-02-15 Sist oppdatert: 2013-02-04bibliografisk kontrollert

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