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1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
Vise andre og tillknytning
2007 (engelsk)Inngår i: Vertical - Cavity Surface - Emitting Lasers XI, San Jose, CA, 2007, Vol. 6484, s. F4840-F4840Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

sted, utgiver, år, opplag, sider
San Jose, CA, 2007. Vol. 6484, s. F4840-F4840
Serie
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 6484
Emneord [en]
Diluted nitride, Long-wavelength vertical cavity surface emitting laser, Optical interconnections, Quantum dots, Strained InGaAs quantum well, Indium compounds, Metallorganic vapor phase epitaxy, Optical interconnects, Semiconductor quantum dots, Semiconductor quantum wells, Threshold current density, Long wavelength vertical cavity surface emitting lasers, Optical confinement, Strained InGaAs quantum wells, Surface emitting lasers
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Identifikatorer
URN: urn:nbn:se:kth:diva-82999DOI: 10.1117/12.700403ISI: 000246390300013Scopus ID: 2-s2.0-34248677858OAI: oai:DiVA.org:kth-82999DiVA, id: diva2:503119
Konferanse
11th Vertical Cavity Surface Emitting Lasers Conference, San Jose, CA, JAN 24-25, 2007
Merknad
Sponsors: SPIE. QC 20120228Tilgjengelig fra: 2012-02-15 Laget: 2012-02-12 Sist oppdatert: 2012-03-19bibliografisk kontrollert

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Hammar, Mattias

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