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Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices
Vise andre og tillknytning
2007 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, nr 15Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The authors show that staggered asymmetric planar Hall resistance (PHR) loops observed in GaMnAs ferromagnetic semiconductor films with biaxial in-plane magnetic anisotropy result in four stable resistance states at zero magnetic field owing to the formation of a stable multidomain structure during magnetization reversal. The values of PHR can be systematically controlled by changing the direction and the scanning range of the applied magnetic field. The possibility of a quaternary memory device based on the observed four PHR states is demonstrated by obtaining consistent results in the writing process using appropriate sequences of magnetic field pulses. © 2007 American Institute of Physics.

sted, utgiver, år, opplag, sider
2007. Vol. 90, nr 15
Emneord [en]
Multidomain structure, Planar Hall resistance (PHR), Quaternary memory devices, Zero magnetic fields, Data storage equipment, Hall effect, Magnetic fields, Magnetic semiconductors, Magnetization, Semiconducting gallium compounds
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-105594DOI: 10.1063/1.2721144ISI: 000245690700063OAI: oai:DiVA.org:kth-105594DiVA, id: diva2:573521
Merknad

References: Daughton, J.M., (1992) Thin Solid Films, 216, p. 162; Gallagher, W.J., Parkin, S.S.P., Lu, Y., Bian, X.P., Marley, A., Roche, K.P., Altman, R.A., Xiao, G., (1997) J. Appl. Phys, 81, p. 3741; Tehrani, S., Chen, E., Durlam, M., DeHerrera, M., Slaughter, J.M., Shi, J., Kerszykowski, G., (1999) J. Appl. Phys, 85, p. 5822; Parkin, S.S., Roche, K.P., Samant, M.G., Rice, P.M., Beyers, R.B., Scheuerlein, R.E., O'Sullivan, E.J., Gallagher, W.J., (1999) J. Appl. Phys, 85, p. 5828; Zhu, J.G., Zheng, Y., Prinz, G., (2000) J. Appl. Phys, 87, p. 6668; Wang, Z., Nakamura, Y., (1996) J. Appl. Phys, 79, p. 6639; Zhang, R., Hassoun, M.M., Black Jr., W.C., Das, B., Wong, K.A., (1999) IEEE Trans. Magn, 35, p. 2829; Tang, H.X., Kawakami, R.K., Awschalom, D.D., Roukes, M.L., (2003) Phys. Rev. Lett, 90, p. 107201; Okamoto, K., (1983) J. Magn. Magn. Mater, 35, p. 353; Moore, G.P., Ferre, J., Mougin, A., Moreno, M., Daweritz, L., (2003) J. Appl. Phys, 94, p. 4530; Liu, X., Lim, W.L., Dobrowolska, M., Furdyna, J.K., Wojtowicz, T., (2005) Phys. Rev. B, 71, p. 035307; Sawicki, M., Matsukura, F., Idziaszek, A., Dietl, T., Schott, G.M., Ruester, C., Gould, C., Molenkamp, L.W., (2004) Phys. Rev. B, 70, p. 245325; Wang, K.Y., Edmonds, K.W., Campion, R.P., Zhao, L.X., Foxon, C.T., Gallagher, B.L., (2005) Phys. Rev. B, 72, p. 085201; Rüster, C., Borzenko, T., Gould, C., Schmidt, G., Molenkamp, L.W., Liu, X., Wojtowicz, T.J., Flatté, M.E., (2003) Phys. Rev. Lett, 91, p. 216602; Lim, W.L., Liu, X., Dziatkowski, K., Ge, Z., Shen, S., Furdyna, J.K., Dobrowolska, M., (2006) Phys. Rev. B, 74, p. 045303; Shin, D.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J.K., (2007) Phys. Rev. Lett, 98, p. 047201; Rüster, C., Borzenko, T., Gould, C., Schmidt, G., Molenkamp, L.W., Liu, X., Wojtowicz, T.J., Flatté, M.E., (2003) Phys. Rev. Lett, 91, p. 216602

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Tilgjengelig fra: 2012-11-30 Laget: 2012-11-22 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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