Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction
Vise andre og tillknytning
2012 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 112, nr 11, s. 113711-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Narrow gap InGaAs two-dimensional electron gas (2DEG) bilayer samples are fabricated and confirmed to have good electronic qualities as well as strong Rashba-type spin-orbit interactions (SOIs). The 2DEG systems are realized by molecular beam epitaxy in the form of wide quantum wells (QWs) with thicknesses tQW∼40-120nm modulation doped in both the upper and lower InAlAs barriers. From the Hall measurements, the overall mobility values of μe ∼15 m2/V s are found for the total sheet electron density of ns ∼8 × 1011/cm2, although the ns is distributed asymmetrically as about 1:3 in the upper and lower 2DEGs, respectively. Careful low temperature magneto-resistance analysis gives large SO coupling constants of α ∼20 × 10 -12eV m as well as expected electron effective masses of m*/m0 ∼0.033-0.042 for each bilayer 2DEG spin sub-band. Moreover, the enhancement of α with decrease of tQW is found. The corresponding self-consistent calculation, which suggests the interaction between the bilayer 2DEGs, is carried out and the origin of α enhancement is discussed.

sted, utgiver, år, opplag, sider
2012. Vol. 112, nr 11, s. 113711-
Emneord [en]
Bi-layer, Bilayer systems, Coupling constants, Electron effective mass, Electronic quality, Hall measurements, InAlAs, Low temperatures, Mobility value, Modulation-doped, Narrow gap, Rashba spin orbit interaction, Rashba-type spin-orbit, Self-consistent calculation, Sheet electron density, Spintronics device, Subbands, Two-dimensional electron gas (2DEG), Hall mobility, Molecular beam epitaxy, Semiconductor quantum wells, Two dimensional, Electron gas
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-116177DOI: 10.1063/1.4766749ISI: 000312490700052Scopus ID: 2-s2.0-84871196765OAI: oai:DiVA.org:kth-116177DiVA, id: diva2:589408
Merknad

QC 20130118

Tilgjengelig fra: 2013-01-18 Laget: 2013-01-16 Sist oppdatert: 2017-12-06bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Søk i DiVA

Av forfatter/redaktør
Ekenberg, Ulf
Av organisasjonen
I samme tidsskrift
Journal of Applied Physics

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 177 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf