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True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-8760-1137
Vise andre og tillknytning
2013 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 79, s. 268-273Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher fT (162 GHz) and 72% higher fmax (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.

sted, utgiver, år, opplag, sider
2013. Vol. 79, s. 268-273
Emneord [en]
Cryogenic, InAs/AlSb high electron mobility transistor (HEMT), Ion implantation, Low-power, MMICs
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-117786DOI: 10.1016/j.sse.2012.06.013ISI: 000313611000051Scopus ID: 2-s2.0-84869493437OAI: oai:DiVA.org:kth-117786DiVA, id: diva2:603100
Merknad

QC 20130205

Tilgjengelig fra: 2013-02-05 Laget: 2013-02-05 Sist oppdatert: 2022-06-24bibliografisk kontrollert

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