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Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals
Department of Electronic and Electrical Engineering, Trinity College Dublin, Ireland.ORCID-id: 0000-0002-3729-6621
Vise andre og tillknytning
2012 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, nr 6, s. 061908-1-061908-4Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Using the model of oscillating dipoles, we simulated the photoluminescence intensity of a triple-layered structure where the silicon nanocrystals layer was enclosed by buffer and capping silicon dioxide layers. It was found that a structure with an optimized buffer layer thickness exhibited photoluminescence which was approximately 20 times more intense than that from the structure without a buffer layer. Theoretical simulations were verified by photoluminescence measurements for the corresponding structures with silicon nanocrystals fabricated by plasma enhanced chemical vapour deposition.

sted, utgiver, år, opplag, sider
2012. Vol. 100, nr 6, s. 061908-1-061908-4
Emneord [en]
buffer layers, elemental semiconductors, nanofabrication, nanostructured materials, photoluminescence, plasma CVD, silicon
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-125055DOI: 10.1063/1.3682537ISI: 000300214000037OAI: oai:DiVA.org:kth-125055DiVA, id: diva2:639141
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QC 20130812

Tilgjengelig fra: 2013-08-06 Laget: 2013-08-06 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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Dyakov, Sergey
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