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Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-7510-9639
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
Vise andre og tillknytning
2014 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, s. 836-840Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 mu s. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a V-F of 3.3 V at 100 A/cm(2) at 25 degrees C, which was decreased to 3.0 V at 300 degrees C.

sted, utgiver, år, opplag, sider
2014. Vol. 778-780, s. 836-840
Emneord [en]
On-axis 4H-SiC, PiN Diode, lifetime enhancement, V-F
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-147446DOI: 10.4028/www.scientific.net/MSF.778-780.836ISI: 000336634100198Scopus ID: 2-s2.0-84896089454ISBN: 978-3-03835-010-1 (tryckt)OAI: oai:DiVA.org:kth-147446DiVA, id: diva2:730217
Konferanse
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
Merknad

QC 20140627. QC 20160304

Tilgjengelig fra: 2014-06-27 Laget: 2014-06-27 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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Salemi, ArashHallén, AndersZetterling, Carl Mikael

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