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Novel mechanism for order-of-magnitude enhancement of rashba effect in wide modulation-doped quantum wells
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101). University of Belgrade, Serbia.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101).
2007 (engelsk)Inngår i: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, American Institute of Physics (AIP), 2007, s. 1371-1372Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The Rashba effect leading to subband splitting in quantum wells is frequently taken to be proportional to some average electric field. We here show that taking the spatial variation of the electric field into account gives important effects. In particular we demonstrate that one can apply a moderate electric field to a wide modulation-doped quantum well and get an order-of-magnitude enhancement of the Rashba splitting characteristic of the built-in interface field. For small asymmetry the wave function localization and spin projection of a subband can be rapid functions of the in-plane wave vector.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2007. s. 1371-1372
Serie
AIP Conference Proceedings, ISSN 0094-243X ; 893
Emneord [en]
Modulation doping, Rashba effect, Spintronics
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-154919DOI: 10.1063/1.2730414ISI: 000246281800674Scopus ID: 2-s2.0-77958504503ISBN: 978-073540397-0 (tryckt)OAI: oai:DiVA.org:kth-154919DiVA, id: diva2:760184
Konferanse
28th International Conference on the Physics of Semiconductors, ICPS 2006, 24 July 2006 through 28 July 2006, Vienna, Austria
Merknad

QC 20141103

Tilgjengelig fra: 2014-11-03 Laget: 2014-10-29 Sist oppdatert: 2014-11-03bibliografisk kontrollert

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