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Band inversion and the topological phase transition in (Pb,Sn)Se
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Materialfysik, MF.ORCID-id: 0000-0002-8216-5321
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2014 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 90, nr 16, s. 161202-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb1-xSnxSe mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band-inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.

sted, utgiver, år, opplag, sider
2014. Vol. 90, nr 16, s. 161202-
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-156989DOI: 10.1103/PhysRevB.90.161202ISI: 000344024300001Scopus ID: 2-s2.0-84908042676OAI: oai:DiVA.org:kth-156989DiVA, id: diva2:769085
Forskningsfinansiär
Knut and Alice Wallenberg FoundationSwedish Research Council
Merknad

QC 20150720

Tilgjengelig fra: 2014-12-05 Laget: 2014-12-04 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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Forlagets fulltekstScopusarXiv:1401.6643

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Wojek, Bastian M.Hårdensson Berntsen, MagnusTjernberg, Oskar

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Physical Review B. Condensed Matter and Materials Physics

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