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High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.ORCID-id: 0000-0002-4606-4865
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2014 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, nr 24, s. 241108-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Scanning near-field photoluminescence (PL) spectroscopy was applied to study spatial variations of emission spectra of AlxGa1-xN epilayers with 0.6 <= x <= 0.7. PL spectra were found to be spatially uniform with peak wavelength standard deviations of only similar to 2 meV and ratios between peak intensity standard deviations and average peak intensity values of 0.06. The observed absence of correlation between the PL peak wavelength and intensity shows that spatial distribution of nonradiative recombination centers is not related to band potential fluctuations. Our results demonstrate that the homogeneous broadening and the random cation distribution primarily determine PL line-widths for layers grown under optimized conditions.

sted, utgiver, år, opplag, sider
2014. Vol. 105, nr 24, s. 241108-
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URN: urn:nbn:se:kth:diva-159119DOI: 10.1063/1.4904710ISI: 000346643600008Scopus ID: 2-s2.0-84919341379OAI: oai:DiVA.org:kth-159119DiVA, id: diva2:783852
Forskningsfinansiär
Swedish Energy Agency, 36652-1
Merknad

QC 20150127

Tilgjengelig fra: 2015-01-27 Laget: 2015-01-22 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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