Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
A quick and a flexible hydride vapor phase epitaxy process to achieve buried heterostructure quantum cascade lasers
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
Vise andre og tillknytning
2014 (engelsk)Inngår i: ECS Transactions, Electrochemical Society, 2014, nr 17, s. 61-68Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

BH-QCLs were fabricated with regrowth of semi-insulating InP:Fe in hydride vapor phase epitaxy reactor. Two types of lateral ridge QCL designs were considered: (i) closely spaced ridges with double trenches and (ii) widely and uniformly spaced ridges. The etched depth varies from 6 to 15 μm in the former and 6 to10 μm in the latter. Double trenches of about 14 μm deep take only < 40 minutes to planarize while the same time is needed to planarize about 8 μm deep trenches with uniform ridges. In any case the achieved growth rate is higher by at least one order of magnitude than that can be achieved in MBE and MOVPE. Some fabricated BH-QCLs are characterized and they exhibit spatially monomode (TMoo) laser with an output power of as high as 2.4 W and wall plug efficiency of ∼8-9% at RT under CW operation.

sted, utgiver, år, opplag, sider
Electrochemical Society, 2014. nr 17, s. 61-68
Emneord [en]
Epitaxial growth, Hydrides, Quantum cascade lasers, Vapor phase epitaxy, Buried heterostructures, CW operation, Deep trench, Hydride vapor phase epitaxy, InP, Output power, Semi-insulating, Wallplug efficiency, Semiconductor lasers
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-167966DOI: 10.1149/06417.0061ecstScopus ID: 2-s2.0-84921284622OAI: oai:DiVA.org:kth-167966DiVA, id: diva2:816810
Konferanse
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Merknad

QC 20150604

Tilgjengelig fra: 2015-06-04 Laget: 2015-05-22 Sist oppdatert: 2015-06-04bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Lourdudoss, Sebastian

Søk i DiVA

Av forfatter/redaktør
Metaferia, WondwosenLourdudoss, Sebastian
Av organisasjonen

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 22 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf