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Monolithic integration of InP based structures on silicon for optical interconnects
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.ORCID-id: 0000-0002-8545-6546
Vise andre og tillknytning
2014 (engelsk)Inngår i: 2014 ECS and SMEQ Joint International Meeting, 2014, nr 6, s. 523-531Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Monolithic integration of InP based structures on Si for optical interconnects is presented. Different strategies are demonstrated to achieve requisite InP platform on Si. In the first strategy, defect free isolated areas of epitaxially and laterally overgrown InP are obtained on Si and the InGaAsP based quantum wells directly grown on these templates have shown high material quality with uniform interfaces. In the second strategy, selective area growth is exploited to achieve InP nano pyramids on Si which can be used for the growth of quantum dot structures. In the third and the final strategy, a method is presented to achieve direct interface between InP and Si using corrugated epitaxial lateral overgrowth.

sted, utgiver, år, opplag, sider
2014. nr 6, s. 523-531
Serie
ECS Transactions, ISSN 1938-5862 ; 64:6
Emneord [en]
Germanium, Interfaces (materials), Optical interconnects, Semiconductor quantum dots, Silicon, Silicon alloys, Epitaxial lateral overgrowth, InP-based structure, Material quality, Monolithic integration, Nano-pyramids, Quantum dot structure, Selective area growth, Uniform interface, Monolithic integrated circuits
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Identifikatorer
URN: urn:nbn:se:kth:diva-168877DOI: 10.1149/06406.0523ecstScopus ID: 2-s2.0-84921307185OAI: oai:DiVA.org:kth-168877DiVA, id: diva2:819464
Konferanse
6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Merknad

QC 20150610

Tilgjengelig fra: 2015-06-10 Laget: 2015-06-09 Sist oppdatert: 2015-06-10bibliografisk kontrollert

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