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Electrical properties of sub-100 nm SiGe nanowires
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Funktionella material, FNM.ORCID-id: 0000-0002-5672-5727
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Funktionella material, FNM.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-9690-2292
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Funktionella material, FNM.ORCID-id: 0000-0003-0493-7792
Vise andre og tillknytning
2016 (engelsk)Inngår i: Journal of semiconductors, Vol. 37, nr 10Artikkel i tidsskrift (Fagfellevurdert) In press
Abstract [en]

In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowires group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method.

sted, utgiver, år, opplag, sider
Institute of Physics (IOP), 2016. Vol. 37, nr 10
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-192072DOI: 10.1088/1674-4926/37/10/102001ISI: 000390142200002Scopus ID: 2-s2.0-84994316197OAI: oai:DiVA.org:kth-192072DiVA, id: diva2:957860
Merknad

QC 20160907

Tilgjengelig fra: 2016-09-05 Laget: 2016-09-05 Sist oppdatert: 2020-03-05bibliografisk kontrollert
Inngår i avhandling
1. Growth, processing and characterization of group IV materials for thermoelectric applications
Åpne denne publikasjonen i ny fane eller vindu >>Growth, processing and characterization of group IV materials for thermoelectric applications
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Discover of new energy sources and solutions are one of the important global issues nowadays, which has a big impact on economy as well as environment. One of the methods to help to mitigate this issue is to recover wasted heat, which is produced in large quantities by the industry, through vehicle exhausts and in many other situations where we consume energy. One way to do this would be using thermoelectric (TE) materials, which enable direct interconversion between heat and electrical energy. This thesis investigates how the novel material combinations and nanotechnology could be used for fabricating more efficient TE materials and devices.

The work presents synthesis, processing, and electrical characterization of group IV materials for TE applications. The starting point is epitaxial growth of alloys of group IV elements, silicon (Si), germanium (Ge) and tin (Sn), with a focus on SiGe and GeSn(Si) alloys. The material development is performed using chemical vapor deposition (CVD) technique. Strained and strain-relaxed Ge1-x Snx (0.01≤x≤0.15) has been successfully grown on Ge buffer and Si substrate, respectively. It is demonstrated that a precise control of temperature, growth rate, Sn flow and buffer layer quality is necessary to overcome Sn segregation and achieve a high quality GeSn layer. The incorporation of Si and n- and p-type dopant atoms is also investigated and it was found that the strain can be compensated in the presence of Si and dopant atoms. 

Si1-xGexlayers are grown on Si-on-insulator wafers and condensed by oxidation at 1050 ᵒC to manufacture SiGe-on-insulator (SGOI) wafers. Nanowires (NWs) are processed, either by sidewall transfer lithography (STL), or by using conventional lithography, and subsequently manufactured into nanoscale dimensions by focused ion beam (FIB) technique. The NWs are formed in an array, where one side is heated by a resistive heater made of Ti/Pt. The power factor of NWs is measured and the results are compared for NWs manufactured by different methods. It is found that the electrical properties of NWs fabricated with FIB technique can be influenced due to Ga doping during ion milling.

Finally, the carrier transport in SiGe NWs formed on SGOI samples is tailored by applying a back-gate voltage on the Si substrate. In this way, the power factor is improved by a factor of 4. This improvement is related to the presence of defects and/or small fluctuation of nanowire shape and Ge content along the NWs, generated during processing and condensation of SiGe layers. The SiGe results open a new window for operation of SiGe NWs-based TE devices in the new temperature range of 250 to 450 K.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2016. s. 53
Serie
TRITA-ICT ; 2016:20
Emneord
Thermoelectric, SiGe, GeSn(Si), Chemical vapor deposition, Nanowires
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
urn:nbn:se:kth:diva-192142 (URN)978-91-7729-076-6 (ISBN)
Eksternt samarbeid:
Disputas
2016-09-30, Sal B, Kistagången 16, Kista, 10:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Swedish Foundation for Strategic Research , EM11-0002
Merknad

QC 20160907

Tilgjengelig fra: 2016-09-07 Laget: 2016-09-06 Sist oppdatert: 2016-09-09bibliografisk kontrollert

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