Bipolar integrated circuits in SiC for extreme environment operationVisa övriga samt affilieringar
2017 (Engelska)Ingår i: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, nr 3, artikel-id 034002Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.
Ort, förlag, år, upplaga, sidor
Institute of Physics Publishing (IOPP), 2017. Vol. 32, nr 3, artikel-id 034002
Nyckelord [en]
bipolar technology, high temperature, integrated circuit, radiation hardness, SiC
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-208111DOI: 10.1088/1361-6641/aa59a7ISI: 000413488700001Scopus ID: 2-s2.0-85014543151OAI: oai:DiVA.org:kth-208111DiVA, id: diva2:1106269
Anmärkning
QC 20170607
2017-06-072017-06-072024-03-15Bibliografiskt granskad