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Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications
Georgia Institute of Technology.
Université de Metz and SUPELEC.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
Université de Metz and SUPELEC.
Visa övriga samt affilieringar
2007 (Engelska)Ingår i: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi M; Brown GJ, 2007, Vol. 6479, s. G4791-G4791Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.

Ort, förlag, år, upplaga, sidor
2007. Vol. 6479, s. G4791-G4791
Serie
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 6479
Nyckelord [en]
Electric properties; Energy gap; Heterojunctions; Pathogens; Semiconductor materials; Ultraviolet radiation, Compact lasers; Real time detection; SiC substrates; Ultra Violet (UV) wavelengths, Gallium nitride
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:kth:diva-13671DOI: 10.1117/12.717640ISI: 000246393600026Scopus ID: 2-s2.0-34248665565ISBN: 978-0-8194-6592-4 (tryckt)OAI: oai:DiVA.org:kth-13671DiVA, id: diva2:326581
Konferens
Conference on Quantum Sensing and Nanophotonic Devices IV, San Jose, CA, JAN 22-25, 2007, SPIE
Anmärkning
QC 20100623Tillgänglig från: 2010-06-23 Skapad: 2010-06-23 Senast uppdaterad: 2010-06-23Bibliografiskt granskad
Ingår i avhandling
1. Gallium nitride templates and its related materials for electronic and photonic devices
Öppna denna publikation i ny flik eller fönster >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

 

Ort, förlag, år, upplaga, sidor
Stockholm: KTH, 2008. s. xiv, 89
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Nyckelord
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
Nationell ämneskategori
Materialteknik
Identifikatorer
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Disputation
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Handledare
Anmärkning
QC 20100623Tillgänglig från: 2008-05-16 Skapad: 2008-05-16 Senast uppdaterad: 2010-09-20Bibliografiskt granskad

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Lourdudoss, Sebastian

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Aggerstam, ThomasLourdudoss, Sebastian
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Electrumlaboratoriet, ELAB
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