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Effect of carbon on Schottky barrier heights of NiSi modified by dopant segregation
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6705-1660
Visa övriga samt affilieringar
2009 (Engelska)Ingår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, nr 6Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased ∅bn from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600°C. Above this temperature, B-DS at this interface is evident thus keeping φbn high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning ∅bp above 1.0 eV by As-DS.

Ort, förlag, år, upplaga, sidor
2009. Vol. 30, nr 6
Identifikatorer
URN: urn:nbn:se:kth:diva-14021OAI: oai:DiVA.org:kth-14021DiVA, id: diva2:329198
Anmärkning
QC20100708Tillgänglig från: 2010-07-08 Skapad: 2010-07-08 Senast uppdaterad: 2017-12-12Bibliografiskt granskad
Ingår i avhandling
1. Integration of metallic source/drain contacts in MOSFET technology
Öppna denna publikation i ny flik eller fönster >>Integration of metallic source/drain contacts in MOSFET technology
2010 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices.

First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification.

Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.

Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH, 2010. s. xii, 78
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2010:06
Nyckelord
CMOS technology, MOSFET, Schottky barrier MOSFET, metallic source/drain, contact resistivity, NiSi, PtSi, SALICIDE, ultrathin silicide, FinFET
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
urn:nbn:se:kth:diva-13136 (URN)978-91-7415-680-5 (ISBN)
Disputation
2010-06-18, Sal C1, KTH-Electrum 1, Isafjordsgatan 22, Kista, 15:28 (Engelska)
Opponent
Handledare
Projekt
NEMO, NANOSIL, SINANO
Anmärkning
QC20100708Tillgänglig från: 2010-05-31 Skapad: 2010-05-28 Senast uppdaterad: 2010-07-08Bibliografiskt granskad

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IEEE Electron Device Letters

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Hellström, Per-Erik

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