Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
KTH, Tidigare Institutioner, Elektronik.
KTH, Tidigare Institutioner, Elektronik.ORCID-id: 0000-0002-8760-1137
KTH, Tidigare Institutioner, Elektronik.ORCID-id: 0000-0002-0292-224X
KTH, Tidigare Institutioner, Elektronik.
Visa övriga samt affilieringar
2000 (Engelska)Ingår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, nr 11, s. 7195-7198Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The diffusion of deuterium (H-2) in epitaxial 4H-SiC layers with buried highly Al-acceptor doped regions has been studied by secondary ion mass spectrometry. H-2 was introduced in the near surface region by the use of 20-keV implantation after which the samples were thermally annealed. As a result, an anomalous accumulation of H-2 in the high doped layers was observed. To explain the accumulation kinetics, a model is proposed where positively charged H-2 ions are driven into the high doped layer and become trapped there by the strong electric field at the edges. This effect is important for other semiconductors as well, since hydrogen is a common impurity present at high concentrations in many semiconductors.

Ort, förlag, år, upplaga, sidor
2000. Vol. 61, nr 11, s. 7195-7198
Nyckelord [en]
6h
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:kth:diva-19645ISI: 000086031200010Scopus ID: 2-s2.0-0001726503OAI: oai:DiVA.org:kth-19645DiVA, id: diva2:338337
Anmärkning

QC 20150625

Tillgänglig från: 2010-08-10 Skapad: 2010-08-10 Senast uppdaterad: 2017-12-12Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Scopus

Personposter BETA

Hallén, AndersLinnarsson, Margareta KNordell, Nils

Sök vidare i DiVA

Av författaren/redaktören
Janson, Martin S.Hallén, AndersLinnarsson, Margareta KNordell, Nils
Av organisationen
Elektronik
I samma tidskrift
Physical Review B. Condensed Matter and Materials Physics
Teknik och teknologier

Sök vidare utanför DiVA

GoogleGoogle Scholar

urn-nbn

Altmetricpoäng

urn-nbn
Totalt: 142 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf