Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.ORCID-id: 0000-0002-0292-224X
Visa övriga samt affilieringar
2002 (Engelska)Ingår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 240, nr 04-mar, s. 501-507Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Investigation on residual Al, B, and N co-doping of 4H-SiC epitaxial layers is reported. The layers were produced by sublimation epitaxy in Ta growth cell environment at different growth temperatures and characterized by secondary ion mass spectrometry. The vapor interaction with Ta was considered through calculations of cohesive energies of several Si-, Al-, B-, and N-containing vapor molecules and also of diatomic Ta-X molecules. An analysis of kinetic mechanisms responsible for impurity incorporation is performed. Among residuals, B exhibits a stronger incorporation dependence on temperature and growth at lower temperatures can favor B decrease in the layers. Under the growth conditions in this study (Ta environment and presence of attendant Al and N), B incorporation is assisted by Si2C vapor molecule. Boron tends to occupy carbon sites at higher temperatures, i.e. higher growth rates.

Ort, förlag, år, upplaga, sidor
2002. Vol. 240, nr 04-mar, s. 501-507
Nyckelord [en]
doping, impurities, vapor phase epitaxy, inorganic compounds, semiconducting materials, sublimation epitaxy, ta-container, crystals
Identifikatorer
URN: urn:nbn:se:kth:diva-21588ISI: 000175912000027OAI: oai:DiVA.org:kth-21588DiVA, id: diva2:340286
Anmärkning
QC 20100525Tillgänglig från: 2010-08-10 Skapad: 2010-08-10 Senast uppdaterad: 2017-12-12Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Personposter BETA

Linnarsson, Margareta K.

Sök vidare i DiVA

Av författaren/redaktören
Linnarsson, Margareta K.
Av organisationen
Mikroelektronik och informationsteknik, IMIT
I samma tidskrift
Journal of Crystal Growth

Sök vidare utanför DiVA

GoogleGoogle Scholar

urn-nbn

Altmetricpoäng

urn-nbn
Totalt: 32 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf