On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/DrainVisa övriga samt affilieringar
2011 (Engelska)Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, nr 7, s. 1898-1906Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.
Ort, förlag, år, upplaga, sidor
2011. Vol. 58, nr 7, s. 1898-1906
Nyckelord [en]
Contacts, MOSFETs, silicides
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-36241DOI: 10.1109/TED.2011.2145381ISI: 000291952900011Scopus ID: 2-s2.0-79959519365OAI: oai:DiVA.org:kth-36241DiVA, id: diva2:430593
Anmärkning
QC 20120329
2011-07-112011-07-112024-03-18Bibliografiskt granskad