Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistorsVisa övriga samt affilieringar
2002 (Engelska)Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-393, nr 2, s. 1337-1340Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximmn current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 °C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Ort, förlag, år, upplaga, sidor
Trans Tech Publications Inc., 2002. Vol. 389-393, nr 2, s. 1337-1340
Nyckelord [en]
Bipolar Transistors, Breakdown Voltage, Thermal Conductivity, Bipolar junction transistors, Electric breakdown, Electric currents, Gain measurement, Silicon carbide
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-85429OAI: oai:DiVA.org:kth-85429DiVA, id: diva2:499967
Anmärkning
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