High dose Fe implantation of gan: Damage build-up and dopant redistributionVisa övriga samt affilieringar
2008 (Engelska)Ingår i: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, Vol. 100, nr PART 4Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]
Undoped GaN epilayers implanted at room temperature with 50-325 keV Fe + ions in the fluence range of 1015 - 1017 ions/cm are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. Results show that for high ion fluences (>1 × 1016 cm-2) enhanced Fe concentration closer to the surface is observed. The Fe redistribution towards the surface increases as the ion fluence increases. Our findings are attributed to radiation enhanced diffusion during ion implantation and increasing of Fe diffusivity in the implantation-induced amorphous phase near the surface.
Ort, förlag, år, upplaga, sidor
2008. Vol. 100, nr PART 4
Serie
Journal of Physics Conference Series, ISSN 1742-6588 ; 100
Nyckelord [en]
Amorphous phase, Diffusivities, Dopant redistribution, Elastic recoil detection analysis, Fluence range, GaN epilayers, High dose, Ion fluences, Radiation enhanced diffusion, Room temperature, Rutherford backscattering/channeling, Time of flight, Gallium alloys, Gallium nitride, Ion implantation, Molecular beam epitaxy
Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-154018DOI: 10.1088/1742-6596/100/4/042036ISI: 000275655200084Scopus ID: 2-s2.0-77954330322OAI: oai:DiVA.org:kth-154018DiVA, id: diva2:755073
Konferens
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, SWEDEN, JUL 02-06, 2007
Anmärkning
QC 20141013
2014-10-132014-10-102022-06-23Bibliografiskt granskad