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Linear optical response of Si1-xGex compounds
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2005 (Engelska)Ingår i: Quantum Sensing and Nanophotonic Devices II, SPIE - International Society for Optical Engineering, 2005, s. 556-564Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

Si1-xGex is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n-and p-type impurities and with different Ge concentrations. The linear optical response of Si 1-x Gex is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε e(ω) = ε1(ω) + iε 2(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.

Ort, förlag, år, upplaga, sidor
SPIE - International Society for Optical Engineering, 2005. s. 556-564
Serie
Progress in Biomedical Optics and Imaging - Proceedings of SPIE, ISSN 1605-7422 ; 5732
Nyckelord [en]
Ellipsometry, Germanium, Heterojunction bipolar transistors, Light absorption, Optical devices, Semiconductor devices, Dielectric functions, Ge concentrations, Linear optical response, Plane wave methods, Semiconducting silicon compounds
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URN: urn:nbn:se:kth:diva-156694DOI: 10.1117/12.591261ISI: 000229036500054Scopus ID: 2-s2.0-22044452115ISBN: 0-8194-5706-X (tryckt)OAI: oai:DiVA.org:kth-156694DiVA, id: diva2:768541
Konferens
Quantum Sensing and Nanophotonic Devices II, 23 January 2005 through 27 January 2005, San Jose, CA, United States
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QC 20141204

Tillgänglig från: 2014-12-04 Skapad: 2014-12-02 Senast uppdaterad: 2014-12-04Bibliografiskt granskad

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Persson, Clas

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