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Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots
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2015 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, nr 24, artikel-id 244503Artikel i tidskrift (Refereegranskat) Published
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Abstract [en]

Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias-and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities "QD-s/WL" and "WL/GaAs" (WL: wetting layer) indicate dominant tunneling under -0.9V (trap-assisted tunneling from the top QDs) and dominant thermal escape under -0.2 similar to 0.5V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under -0.2 similar to 0.2V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects.

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American Institute of Physics (AIP), 2015. Vol. 118, nr 24, artikel-id 244503
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EMISSION, WELLS
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URN: urn:nbn:se:kth:diva-181381DOI: 10.1063/1.4937408ISI: 000367535100026Scopus ID: 2-s2.0-84953857669OAI: oai:DiVA.org:kth-181381DiVA, id: diva2:900268
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Science for Life Laboratory - a national resource center for high-throughput molecular bioscience
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QC 20160203

Tillgänglig från: 2016-02-03 Skapad: 2016-02-01 Senast uppdaterad: 2017-11-30Bibliografiskt granskad

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Fu, Ying

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