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Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications, 2016, p. 414-417Conference paper, Published paper (Refereed)
Abstract [en]

The carbon vacancy (VC) is the major charge carrier lifetime limiting-defect in 4H-SiC epitaxial layers and it is readily formed during elevated heat treatments. Here we describe two ways for controlling the VC concentration in 4H-SiC epi-layer using different annealing procedures. One set of samples was subjected to high temperature processing at 1950 °C for 3 min, but then different cooling rates were applied. A significant reduction of the VC concentration was demonstrated by the slow cooling rate. In addition, elimination of the VC’s was also established by annealing a sample, containing high VC concentration, at 1500 °C for a sufficiently long time. Both procedures clearly demonstrate the need for maintaining thermodynamic equilibrium during cooling.

Place, publisher, year, edition, pages
Trans Tech Publications, 2016. p. 414-417
Keywords [en]
4H-SiC, Carbon vacancy, Cooling rate, DLTS, High-temperature processing, Carrier lifetime, Cooling, Deep level transient spectroscopy, Temperature, Annealing procedures, Cooling rates, High temperature treatments, Slow cooling, Thermodynamic equilibria, Silicon carbide
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-195495DOI: 10.4028/www.scientific.net/MSF.858.414Scopus ID: 2-s2.0-84971507037ISBN: 9783035710427 (print)OAI: oai:DiVA.org:kth-195495DiVA, id: diva2:1045822
Conference
4 October 2015 through 9 October 2015
Note

QC 20161110

Available from: 2016-11-10 Created: 2016-11-03 Last updated: 2016-11-10Bibliographically approved

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