Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Digital Predistortion of Single and Concurrent Dual BandRadio Frequency GaN Amplifiers with Strong NonlinearMemory Effects
KTH, Skolan för elektro- och systemteknik (EES), Signalbehandling. KTH, Skolan för elektro- och systemteknik (EES), Centra, ACCESS Linnaeus Centre. University of Gävle, Sweden.ORCID-id: 0000-0003-1183-6666
KTH, Skolan för elektro- och systemteknik (EES), Signalbehandling. KTH, Skolan för elektro- och systemteknik (EES), Centra, ACCESS Linnaeus Centre.ORCID-id: 0000-0002-2718-0262
ATM, University of Gävle.
2017 (engelsk)Inngår i: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 65, nr 7, s. 2453-2464Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Electrical anomalies due to trapping effects in gallium nitride (GaN) power amplifiers (PAs) give rise to long-term or strong memory effects. We propose novel models based on infinite impulse response fixed pole expansion techniques for the behavioral modeling and digital predistortion of single-input single-output (SISO) and concurrent dual-band GaN PAs. Experimental results show that the proposed models outperform the corresponding finite impulse response (FIR) models by up to 17 dB for the same number of model parameters. For the linearization of a SISO GaN PA, the proposed models give adjacent channel power ratios (ACPRs) that are 7-17 dB lower than the FIR models. For the concurrent dual-band case, the proposed models give ACPRs that are 9-14 dB lower than the FIR models.

sted, utgiver, år, opplag, sider
IEEE Press, 2017. Vol. 65, nr 7, s. 2453-2464
Emneord [en]
Behavioral modeling, concurrent dual band, digital predistortion (DPD), finite impulse response (FIR), infinite impulse response (IIR), power amplifiers (PAs), radio frequency, single-input single-output (SISO)
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-197368DOI: 10.1109/TMTT.2016.2642948ISI: 000405006300023Scopus ID: 2-s2.0-85012982096OAI: oai:DiVA.org:kth-197368DiVA, id: diva2:1052016
Merknad

QC 20161205

Tilgjengelig fra: 2016-12-05 Laget: 2016-12-05 Sist oppdatert: 2017-08-02bibliografisk kontrollert
Inngår i avhandling
1. Characterization and Linearization of Multi-band Multi-channel RF Power Amplifiers
Åpne denne publikasjonen i ny fane eller vindu >>Characterization and Linearization of Multi-band Multi-channel RF Power Amplifiers
2017 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The World today is deeply transformed by the advancement in wireless technology. The envision of a smart society where interactions between physical and virtual dimensions of life are intertwined and where human interaction is mediated by machines, e.g., smart phones, demands increasingly more data traffic. This continual increase in data traffic requires re-designing of the wireless technologies for increased system capacity and flexibility. In this thesis, aspects related to behavioral modeling, characterization, and linearization of multi-channel/band power amplifiers (PAs) are discussed.

When building a model of any system, it is advantageous to take into account the knowledge of the physics of the system and include into the model. This approach could help to improve the model performance. In this context, three novel behavioral models and DPD schemes for nonlinear MIMO transmitters are proposed.

To model and compensate distortions in GaN based RF PAs in presence of long-term memory effects, novel models for SISO and concurrent dual-band PAs are proposed. These models are based on a fixed pole expansion technique and have infinite impulse response. They show substantial performance improvement. A behavioral model based on the physical knowledge of the concurrent dual-band PA is derived, and its performance is investigated both for behavioral modeling and compensation of nonlinear distortions.

Two-tone characterization is a fingerprint method for the characterization of memory effects in dynamic nonlinear systems. In this context, two novel techniques are proposed. The first technique is a dual two-tone characterization technique to characterize the memory effects of self- and cross-modulation products in concurrent dual-band transmitter. The second technique is for the characterization and analysis of self- and cross-Volterra kernels of nonlinear 3x3 MIMO systems using three-tone signals.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2017. s. 59
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:185
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-197266 (URN)978-91-7729-198-5 (ISBN)
Disputas
2017-02-24, 99133, Kungsbäcksvägen 47, Gävle, 10:15 (engelsk)
Opponent
Veileder
Merknad

QC 20161205

Tilgjengelig fra: 2016-12-05 Laget: 2016-11-30 Sist oppdatert: 2016-12-05bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Søk i DiVA

Av forfatter/redaktør
Amin, ShoaibHändel, Peter
Av organisasjonen
I samme tidsskrift
IEEE transactions on microwave theory and techniques

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 699 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf